M.Nagarajan
Heteroepitaxy of indium phosphide(InP) on silicon(Si) substrate is of great interest, since it offers a promising opportunity for monolithic integration of InP based optoelectronic and high speed devices with Si integrated circuits. Epitaxial lateral overgrowth (ELOG) of InP has been carried out on different patterned substrates using HVPE technique. The growth experiments have been carried out in two steps on three different patterned substrates. All the patterns have been oriented at 30° along (110) direction on the substrate. . Optical properties have been studied by Photoluminescence, the ull width haf maximum(FWHM )has been calculated and compared on different substrates. Surface morphology of ELOG InP grown on different substrates have been observed by scanning electron microscopy. High resolution X-ray diffraction(HRXRD) rocking curve for (004) reflection plane has been carried out on ELOG InP. Hall measurement at room temperature has been carried out and confirmed that the layers are unintentionally doped n-type. Mobility and carrier concentrations have been calculated and compared with planar InP epilayer.
Heteroepitaxy, Indium Phosphide, Silicon, Photoluminescence, Scanning electron Microscope, High resolution X-ray diffraction, Hall, Mobility, carrier concentration