Nitin Tiwari, Amit Mishra
The main goals of NLSI Designer are to reduce the area, improve performance and decreasing the cost. There are several sources for the leakage current, i.e. low threshold voltage causes to sub-threshold current, very thin gate oxides cause to gate leakage, and heavily-doped halo doping profile causes to band-to-band tunneling leakage. It is seemed that we have to focus to minimize the leakage power in the number of transistors and the large memory substance of future SoC (System on Chip) devices.
Memory, Tunneling Leakage, Systems-On-Chip, Leakage Power Consumption.